Semiconductor Power Module And Method For Manufacturing A Semiconductor Power Module

Abstract: A semiconductor power module (1) comprises a metal substrate structure (10) with a metal top layer (11), a metal bottom layer (13), and a dielectric layer (12) in between. The semiconductor power module (1) further comprises a housing (2) with a top wall (21) and side walls (22) that is coupled to the metal substrate structure (10) such that with respect to a stacking direction (A) there is a predetermined distance (D) between a lower surface (24) of the top wall (21) and an upper surface (14) of the metal top layer (11) adjacent to the side walls (22), respectively. The semiconductor power module (1) further comprises at least one terminal (16) that is arranged inside the housing (2), wherein the at least one terminal (16) is coupled to the lower surface (24) of the top wall (21) on the one hand and coupled to the upper surface (14) of the metal top layer (11) on the other hand. With respect to the stacking direction (A) a length of the at least one terminal (16) is configured in coordination with the distance (D), such that due to the at least one terminal (16) the metal substrate structure (10) is bent in a predetermined manner and comprises a convex shape in interaction with the housing (2) and the at least one terminal (16).

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