Method For The Production Of Improved Sic Substrates And Sic Epilayers

Abstract: The invention relates to a method for manufacturing a Silicon Carbide (SiC) substrate, at least comprising the steps of: a) providing the SiC-substrate, wherein the SiC-substrate is suitable for growing a SiC-epilayer thereon; and b) implanting group Va elements in the SiC-substrate by irradiating at least a part of the SiC-substrate with group Va ions, wherein the irradiation is performed at an energy of greater than or equal to 100 keV and less than or equal to 200 keV and an irradiation dose of greater than or equal to 105 cm-2 and less than or equal to 1010 cm-2. Furthermore, the invention relates to a method for manufacturing a Silicon Carbide epilayer, a SiC substrate and a semiconductor device. (Figure 1)

Patent Information

Applicants

Inventors

Specification

Documents

Application Documents