Power Semiconductor Device And Production Method

Abstract: In an embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) directly at the source region (21), - a gate electrode (31) arranged at the semiconductor body (2) and assigned to the channel region (220), and - a gate insulator (4) directly between the semiconductor body (2) and the gate electrode (31), wherein the gate insulator (4) has a non-uniform thickness Tox along the channel region (220) so that, along the channel region (220), the gate insulator (4) is thickest in a first part (44) remote from the source region (21).

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