Power Semiconductor Device And Method For Producing A Power Semiconductor Device

Abstract: A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second conductivity type different from the first conductivity type, and - a second electrode (6), wherein - at least one of the first semiconductor layer (3) and the second semiconductor layer (5) comprises an oxide layer (24) extending in an active region (9) of the power semiconductor device (1) being surrounded by a termination region (8) of the power semiconductor device (1), and - at least one of the first semiconductor layer (3) and the second semiconductor layer (5) has a bevel structure (19). Furthermore, a method for producing a power semiconductor device (1) is specified.

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