Semiconductor Device And Method For Producing A Semiconductor Device

Abstract: The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (4) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) of a first conductivity type and at least three base regions (13a, 13b, 13c) each of a second conductivity type. The semiconductor body further comprises an injection region (12) of the first conductivity type. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first-type trench. The second-type trench is free of the gate electrode. An electrically conductive layer (8) is arranged on the top side above the third base region and is electrically connected to an electrode. The electrically conductive layer is located close to the third base region so that it capacitively couples thereto.

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