Method For Improving The Channel Mobility In A Sic Mosfet

Abstract: A method for manufacturing a SiC semiconductor element (10) comprising the steps of providing a SiC substrate (20) with a SiC epitaxial layer (30) on top treating the SiC epitaxial layer (30) with plasma immersion ion implantation (PIII) using dopants of a first material (35). The method further comprises thermal oxidizing a top surface (31) of the SiC epitaxial layer (30) such that a thermal oxide layer (40) is grown and etching the thermal oxide layer (40). The method further comprises implanting dopants of a second material (36) in the SiC epitaxial layer (30) such that a drain (50) and source (60) are created activating the dopants with an activation anneal and depositing a metal gate (70).

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