Insulated Metal Substrate And Method For Producing An Insulated Metal

Insulated Metal Substrate And Method For Producing An Insulated Metal Substrate

Abstract: An insulated metal substrate (1) for a power semico nductor device is specified, comprising - a metal base (2), - a dielectric layer (3) arranged on the metal base (2), - an electrically conductive layer (4) arranged on the dielectric layer (3), and - a reinforcement structure (5), wherein - the reinforcement structure (5) is arranged in a peripheral region of the insulated metal substrate (1) at leas t partially surrounding a central region of the insul ated metal substrate (1). Furthermore, a method for producing an insulated me tal substrate is specified.

Patent Information

Application #

Filing Date

12 September 2025

Publication Number

40/2025

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. SANTOLARIA, Lluis

Rosengasse 5 4600 Olten

2. GUILLON, David

Rempen 13 8857 Vorderthal

3. TRUESSEL, Dominik

Reussgasse 11 5620 Bremgarten

4. SIROKY, Georg

Klarastrasse 24 4600 Olten

Specification

Documents

Application Documents

#	Name	Date
1	202547087036-STATEMENT OF UNDERTAKING (FORM 3) [12-09-2025(online)].pdf	2025-09-12
2	202547087036-REQUEST FOR EXAMINATION (FORM-18) [12-09-2025(online)].pdf	2025-09-12
3	202547087036-PROOF OF RIGHT [12-09-2025(online)].pdf	2025-09-12
4	202547087036-PRIORITY DOCUMENTS [12-09-2025(online)].pdf	2025-09-12
5	202547087036-FORM 18 [12-09-2025(online)].pdf	2025-09-12
6	202547087036-FORM 1 [12-09-2025(online)].pdf	2025-09-12
7	202547087036-DRAWINGS [12-09-2025(online)].pdf	2025-09-12
8	202547087036-DECLARATION OF INVENTORSHIP (FORM 5) [12-09-2025(online)].pdf	2025-09-12
9	202547087036-COMPLETE SPECIFICATION [12-09-2025(online)].pdf	2025-09-12
10	202547087036-FORM-26 [15-09-2025(online)].pdf	2025-09-15
11	202547087036-Proof of Right [17-09-2025(online)].pdf	2025-09-17