Manufacturing Method And Power Semiconductor Device

Abstract: In at least one embodiment, the method is for producing a power semiconductor device (1) and comprises the following steps: - providing a semiconductor body (2) based on SiC, - irradiating at least a first portion (21) of a top side (20) of the semiconductor body (2) with low-energy electron radiation (E), and - producing an electrical insulation layer (3) at least in the at least one irradiated first portion (21).

Patent Information

Application #

Filing Date

10 September 2024

Publication Number

05/2025

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. ALFIERI, Giovanni

Gugelweg 29 5103 Möriken

2. ROMANO, Gianpaolo

Wiesenstrasse 7 5400 Baden

Specification

Documents

Application Documents

#	Name	Date
1	202447068176-STATEMENT OF UNDERTAKING (FORM 3) [10-09-2024(online)].pdf	2024-09-10
2	202447068176-REQUEST FOR EXAMINATION (FORM-18) [10-09-2024(online)].pdf	2024-09-10
3	202447068176-PROOF OF RIGHT [10-09-2024(online)].pdf	2024-09-10
4	202447068176-PRIORITY DOCUMENTS [10-09-2024(online)].pdf	2024-09-10
5	202447068176-FORM 18 [10-09-2024(online)].pdf	2024-09-10
6	202447068176-FORM 1 [10-09-2024(online)].pdf	2024-09-10
7	202447068176-DRAWINGS [10-09-2024(online)].pdf	2024-09-10
8	202447068176-DECLARATION OF INVENTORSHIP (FORM 5) [10-09-2024(online)].pdf	2024-09-10
9	202447068176-COMPLETE SPECIFICATION [10-09-2024(online)].pdf	2024-09-10
10	202447068176-FORM-26 [11-09-2024(online)].pdf	2024-09-11
11	202447068176-FORM 3 [10-02-2025(online)].pdf	2025-02-10