Reverse Conducting Insulated Gate Bipolar Transistor, Igbt

Abstract: According to an embodiment, the RC-IGBT (1000) comprises a semiconductor body with an emitter side and a collector side (shown in Fig. 4), a collector layer at the collector side with at least one pilot region (10) and at least one mixed region (11) and a collector electrode on the collector side and in electrical contact with the collector layer. The pilot region (10) is of a first conductivity type. The mixed region (11) has first subregions (111) of the first conductivity type and second subregions (112) of a second conductivity type. The doping concentration in the first subregions is different from the doping concentration in the pilot region. The collector region further comprises an edge region (12) surrounding pilot region (10) and the mixed region (11). The edge region may be mainly of the first or of the second conductivity type, and the first and second subregions (111, 112) may extend partly into the edge region (12).

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