Production Method And Power Semiconductor Device

Abstract: In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) directly at the source region (21), and - a gate insulator (4) directly between the semiconductor body (2) and the gate electrode (31), wherein the channel region (220) has a non-uniform channel doping profile (6) along the gate insulator (4), so that a doping concentration NA in the channel region (220) is largest in a first section (61) remote from the source region (21).

Patent Information

Application #

Filing Date

11 January 2024

Publication Number

07/2024

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. GUPTA, Gaurav

Martha-Ringierstrasse 7 5600 Lenzburg

2. DE-MICHIELIS, Luca

Buchserstrasse 10 5000 Aarau

3. VITALE, Wolfgang Amadeus

Aeschbachweg 12 5000 Aarau

Specification

Documents

Application Documents

#	Name	Date
1	202447002079-STATEMENT OF UNDERTAKING (FORM 3) [11-01-2024(online)].pdf	2024-01-11
2	202447002079-PROOF OF RIGHT [11-01-2024(online)].pdf	2024-01-11
3	202447002079-PRIORITY DOCUMENTS [11-01-2024(online)].pdf	2024-01-11
4	202447002079-FORM 18 [11-01-2024(online)].pdf	2024-01-11
5	202447002079-FORM 1 [11-01-2024(online)].pdf	2024-01-11
6	202447002079-DRAWINGS [11-01-2024(online)].pdf	2024-01-11
7	202447002079-DECLARATION OF INVENTORSHIP (FORM 5) [11-01-2024(online)].pdf	2024-01-11
8	202447002079-COMPLETE SPECIFICATION [11-01-2024(online)].pdf	2024-01-11
9	202447002079-FORM-26 [16-02-2024(online)].pdf	2024-02-16
10	202447002079-FORM 3 [21-06-2024(online)].pdf	2024-06-21
11	202447002079-FER.pdf	2025-09-17

Search Strategy

1	202447002079_SearchStrategyNew_E_SearchHistory(4)E_16-09-2025.pdf