Power Semiconductor Device And Method For Producing A Power Semiconductor Device

Abstract: A power semiconductor device (1) is specified, comprising - a drift layer (2) of a first conductivity type, - a well region (3) of a second conductivity type being different from the first conductivity type, and - a first doped region (4) of the first conductivity type and a second doped region (5) of the second conductivity type, wherein - the well region (3), the first doped region (4) and the second doped region (5) are provided at a first side of the power semiconductor device (1), - the first doped region (4) and the second doped region (5) are spaced apart (6) from the drift layer (2) by the well region (3), and - the second doped region (5) is completely surrounded by the first doped region (4) in lateral directions, and - the second doped region (5) comprises at least two parts (6), which are spaced apart (6) from one another in lateral directions by the first doped region (4). Furthermore, a method for producing a power semiconductor device (1) is specified.

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