Vertical Igbt With Complementary Channel For Hole Extraction

Abstract: The semiconductor device (100) is a vertical IGBT and comprises a semiconductor body (1) with a top side (10), a main electrode (2) on the top side and a gate electrode (3). The semiconductor body comprises a drift layer (11) of a first conductivity type, a first base region (12) of a second conductivity type, a second (complementary) base region (13) of the first conductivity type, a first contact region (14) of the first conductivity type and a second contact region (15) of the second conductivity type. The second base region has a greater doping concentration than the drift layer. The first contact region adjoins the first base region and the top side. The second contact region adjoins the second base region and the top side. The main electrode is in electrical contact with the first and the second contact region. In a first lateral direction, at least a portion of the gate electrode is arranged between the first contact region and the second contact region. When turned off a hole inversion channel is induced in the second base region (13) to extract holes.

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