Method For Producing A Semiconductor Device And Semiconductor Device

Abstract: According to an embodiment, the method comprises a step of providing a semiconductor body (1) with a top side (10). A mask (2) is applied on the top side of the semiconductor body, wherein the mask comprises at least one first section (21) and at least one second section (22). The at least one second section is laterally adjacent to the at least one first section. The mask is thicker in the at least one second section than in the at least one first section. In a further step, a channel region (11) of a first conductivity type is formed in the semiconductor body (1) in the area of the at least one first section. Forming the channel region comprises implanting first-type dopants through the top side into the semiconductor body. In a further step, an auxiliary layer (3) is deposited on a lateral side (22a) of the at least one second section, said lateral side facing towards the at least one first section. Thereby, the lateral extension of the at least one second section is increased and the lateral extension of the at least one first section is reduced. In a further step, a hole is produced in the semiconductor body in the area of the first section with the reduced lateral extension so that the hole extends from the top side through the channel region.

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