Reverse Conducting Insulated Gate Bipolar Transistor And Method For Producing A Reverse Conducting Insulated Gate Bipolar Transistor

Abstract: According to an embodiment, the RC-IGBT (100) comprises a semiconductor body (10) with an emitter side (11) and a collector side (19). The semiconductor body comprises at least one mixed region (18) at the collector side. The mixed region comprises a plurality of first-type regions (15) which are of a first conductivity type and which are laterally spaced apart from each other by semiconductor material of a second conductivity type. In top view onto the collector side, the first-type regions of the mixed region are each formed in an elongated manner and each extend ray-like away from a reference point of the mixed region. The number of first-type regions of the mixed region increases stepwise in a direction away from the reference point.

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