Method And Semiconductor Device

Abstract: In at least one embodiment, the method is for producing a semiconductor device (1) and comprises: A) providing a semiconductor body (2) which is based on a group IV-semiconductor material, B) doping a first region (21) in the semiconductor body (2), the first region (21) is of a first conductivity type and starts from a surface (20) of the semiconductor body (2), and C) forming a recess (3) in the semiconductor body (2) by selectively and wet-chemically etching the first region (21).

Patent Information

Application #

Filing Date

24 September 2025

Publication Number

43/2025

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. ALFIERI, Giovanni

Gugelweg 29 5103 Möriken

2. ROMANO, Gianpaolo

Wiesenstrasse 7 5400 Baden

3. MIHAILA, Andrei

Flühstrasse 19 5415 Rieden

4. ARANGO, Yulieth Cristina

Hopfenstrasse 4A 8045 Zürich

5. WEHRLE, Moritz

Sonnhaldenstrasse 1 8304 Wallisellen

Specification

Documents

Application Documents

#	Name	Date
1	202547091297-STATEMENT OF UNDERTAKING (FORM 3) [24-09-2025(online)].pdf	2025-09-24
2	202547091297-REQUEST FOR EXAMINATION (FORM-18) [24-09-2025(online)].pdf	2025-09-24
3	202547091297-PROOF OF RIGHT [24-09-2025(online)].pdf	2025-09-24
4	202547091297-PRIORITY DOCUMENTS [24-09-2025(online)].pdf	2025-09-24
5	202547091297-FORM 18 [24-09-2025(online)].pdf	2025-09-24
6	202547091297-FORM 1 [24-09-2025(online)].pdf	2025-09-24
7	202547091297-DRAWINGS [24-09-2025(online)].pdf	2025-09-24
8	202547091297-DECLARATION OF INVENTORSHIP (FORM 5) [24-09-2025(online)].pdf	2025-09-24
9	202547091297-COMPLETE SPECIFICATION [24-09-2025(online)].pdf	2025-09-24
10	202547091297-FORM-26 [25-09-2025(online)].pdf	2025-09-25
11	202547091297-Proof of Right [27-09-2025(online)].pdf	2025-09-27