Abstract: A method for producing a silicon carbide substrate (11) comprises providing the silicon carbide substrate (11) and irradiating the silicon carbide substrate (11) with particles (14) out of a group comprising electrons, hydrogen atoms, helium atoms, lithium atoms, beryllium atoms, boron atoms, sodium atoms, magnesium atoms and aluminum atoms. An energy of the particles (14) for irradiation is selected such that a resistivity (?) is increased by the irradiation at least in a part of the silicon carbide substrate (11) and the silicon carbide substrate (11) is semiconducting after irradiation.
| # | Name | Date |
|---|---|---|
| 1 | 202347076315-STATEMENT OF UNDERTAKING (FORM 3) [08-11-2023(online)].pdf | 2023-11-08 |
| 2 | 202347076315-PROOF OF RIGHT [08-11-2023(online)].pdf | 2023-11-08 |
| 3 | 202347076315-PRIORITY DOCUMENTS [08-11-2023(online)].pdf | 2023-11-08 |
| 4 | 202347076315-FORM 1 [08-11-2023(online)].pdf | 2023-11-08 |
| 5 | 202347076315-DRAWINGS [08-11-2023(online)].pdf | 2023-11-08 |
| 6 | 202347076315-DECLARATION OF INVENTORSHIP (FORM 5) [08-11-2023(online)].pdf | 2023-11-08 |
| 7 | 202347076315-COMPLETE SPECIFICATION [08-11-2023(online)].pdf | 2023-11-08 |
| 8 | 202347076315-FORM 18 [09-11-2023(online)].pdf | 2023-11-09 |
| 9 | 202347076315-FORM-26 [10-01-2024(online)].pdf | 2024-01-10 |
| 10 | 202347076315-FORM 3 [03-05-2024(online)].pdf | 2024-05-03 |
| 11 | 202347076315-FER.pdf | 2025-03-20 |
| 12 | 202347076315-FORM 3 [11-06-2025(online)].pdf | 2025-06-11 |
| 13 | 202347076315-OTHERS [16-06-2025(online)].pdf | 2025-06-16 |
| 14 | 202347076315-FER_SER_REPLY [16-06-2025(online)].pdf | 2025-06-16 |
| 15 | 202347076315-COMPLETE SPECIFICATION [16-06-2025(online)].pdf | 2025-06-16 |
| 16 | 202347076315-CLAIMS [16-06-2025(online)].pdf | 2025-06-16 |
| 17 | 202347076315-US(14)-HearingNotice-(HearingDate-01-12-2025).pdf | 2025-11-12 |
| 1 | 202347076315_SearchStrategyNew_E_Search_Strategy_202347076315E_27-02-2025.pdf |