Power Semiconductor Device And Method For Producing A Power Semiconductor Device

Abstract: A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second conductivity type different from the first conductivity type, and - a second electrode (6), wherein - the first semiconductor layer (3) is structured by several doped regions (7) of the second conductivity type i n a termination region (8) surrounding an active region (9) of the power semiconductor device (1), and - at least one of the first semiconductor layer (3) and the second semiconductor layer (5) has a bevel structure (19). Furthermore, a method for producing a power semicon ductor device (1) is specified.

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