Metal Substrate Structure And Method For Manufacturing A Metal Substrate Structure For A Semiconductor Power Module And Semiconductor Power Module

Abstract: A metal substrate structure (10) for a semiconductor power module comprises a circuit metallization layer (11), a metal bottom layer (13) that coupled with the circuit metallization layer (11), and an isolating dielectric layer (12) that is coupled with and arranged between the circuit metallization layer (11) and the metal bottom layer (13) with respect to a stacking direction (A). The circuit metallization layer (11) or the dielectric layer (12) at least locally forms a top layer of the metal substrate structure (10), and the top layer and the bottom layer (13) comprise a fixation area (18) configured for receiving a fixing element (16) to fix the metal substrate structure (10) to a further component (14) of the semiconductor power module. At least the top layer comprises a stress relief recess (15).

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