Clamping Element And Method For Producing A Power Semiconductor Device

Abstract: A clamping element (9) is specified configured to be pressed to a baseplate (2) of at least one power semiconductor module (1) comprising a mold (4), comprising - at least one contact area (10) being configured to be in direct contact to at least one clamping area (7) of the baseplate (2) being free of the mold (4), and - at least one recess (11) provided in the baseplate, wherein - the recess (11) and the contact area (10) are configured to face the baseplate. Further, a method for producing a power semiconductor device is specified.

Patent Information

Application #

Filing Date

24 November 2023

Publication Number

51/2023

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. SANTOLARIA, Lluis

Rosengasse 5 4600 Olten

2. TRUESSEL, Dominik

Reussgasse 11 5620 Bremgarten

3. BEYER, Harald

Aavorstadt 39 5600 Lenzburg

Specification

Documents

Application Documents

#	Name	Date
1	202347079815-STATEMENT OF UNDERTAKING (FORM 3) [24-11-2023(online)].pdf	2023-11-24
2	202347079815-PROOF OF RIGHT [24-11-2023(online)].pdf	2023-11-24
3	202347079815-PRIORITY DOCUMENTS [24-11-2023(online)].pdf	2023-11-24
4	202347079815-FORM 18 [24-11-2023(online)].pdf	2023-11-24
5	202347079815-FORM 1 [24-11-2023(online)].pdf	2023-11-24
6	202347079815-DRAWINGS [24-11-2023(online)].pdf	2023-11-24
7	202347079815-DECLARATION OF INVENTORSHIP (FORM 5) [24-11-2023(online)].pdf	2023-11-24
8	202347079815-COMPLETE SPECIFICATION [24-11-2023(online)].pdf	2023-11-24
9	202347079815-FORM-26 [05-01-2024(online)].pdf	2024-01-05
10	202347079815-FORM 3 [29-04-2024(online)].pdf	2024-04-29