Abstract: According to an embodiment the method for producing a semiconductor body (10) comprises the step of providing a first semiconductor layer (1) of SiC a further step of introducing carbon into the first semiconductor layer so that at least a portion of the first semiconductor layer becomes at least one C rich region (11) and a step of growing a second semiconductor layer (2) of SiC on the first semiconductor layer comprising the at least one C rich region.
| # | Name | Date |
|---|---|---|
| 1 | 202547021365-STATEMENT OF UNDERTAKING (FORM 3) [10-03-2025(online)].pdf | 2025-03-10 |
| 2 | 202547021365-REQUEST FOR EXAMINATION (FORM-18) [10-03-2025(online)].pdf | 2025-03-10 |
| 3 | 202547021365-PROOF OF RIGHT [10-03-2025(online)].pdf | 2025-03-10 |
| 4 | 202547021365-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [10-03-2025(online)].pdf | 2025-03-10 |
| 5 | 202547021365-FORM 18 [10-03-2025(online)].pdf | 2025-03-10 |
| 6 | 202547021365-FORM 1 [10-03-2025(online)].pdf | 2025-03-10 |
| 7 | 202547021365-DRAWINGS [10-03-2025(online)].pdf | 2025-03-10 |
| 8 | 202547021365-DECLARATION OF INVENTORSHIP (FORM 5) [10-03-2025(online)].pdf | 2025-03-10 |
| 9 | 202547021365-COMPLETE SPECIFICATION [10-03-2025(online)].pdf | 2025-03-10 |
| 10 | 202547021365-FORM-26 [11-03-2025(online)].pdf | 2025-03-11 |
| 11 | 202547021365-FORM 3 [19-09-2025(online)].pdf | 2025-09-19 |