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Method For Producing A Semiconductor Body Semiconductor Body And Power Semiconductor Device

Abstract: According to an embodiment the method for producing a semiconductor body (10) comprises the step of providing a first semiconductor layer (1) of SiC a further step of introducing carbon into the first semiconductor layer so that at least a portion of the first semiconductor layer becomes at least one C rich region (11) and a step of growing a second semiconductor layer (2) of SiC on the first semiconductor layer comprising the at least one C rich region.

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Patent Information

Application #
Filing Date
10 March 2025
Publication Number
12/2025
Publication Type
INA
Invention Field
ELECTRONICS
Status
Email
Parent Application

Applicants

HITACHI ENERGY LTD
Brown Boveri Strasse 5 8050 Z??rich

Inventors

1. ARANGO Yulieth Cristina
Hopfenstrasse 4A 8045 Z??rich
2. ALFIERI Giovanni
Gugelweg 29 5103 M??riken

Specification

Documents

Application Documents

# Name Date
1 202547021365-STATEMENT OF UNDERTAKING (FORM 3) [10-03-2025(online)].pdf 2025-03-10
2 202547021365-REQUEST FOR EXAMINATION (FORM-18) [10-03-2025(online)].pdf 2025-03-10
3 202547021365-PROOF OF RIGHT [10-03-2025(online)].pdf 2025-03-10
4 202547021365-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [10-03-2025(online)].pdf 2025-03-10
5 202547021365-FORM 18 [10-03-2025(online)].pdf 2025-03-10
6 202547021365-FORM 1 [10-03-2025(online)].pdf 2025-03-10
7 202547021365-DRAWINGS [10-03-2025(online)].pdf 2025-03-10
8 202547021365-DECLARATION OF INVENTORSHIP (FORM 5) [10-03-2025(online)].pdf 2025-03-10
9 202547021365-COMPLETE SPECIFICATION [10-03-2025(online)].pdf 2025-03-10
10 202547021365-FORM-26 [11-03-2025(online)].pdf 2025-03-11
11 202547021365-FORM 3 [19-09-2025(online)].pdf 2025-09-19