Si C Assembly, Power Semiconductor Device And Method For Producing A Si C Assembly For A Power Semiconductor Device

Abstract: An assembly (1) for a power semiconductor device (10) is provided, wherein the assembly (1) comprises a main body (1M) based on SiC and a plurality of vias (1V) based on an electrically conductive material. The main body (1M) comprises a first layer (11) having a first thickness (11T) and a second layer (12) having a second thickness (12T), the second thickness (12T) being smaller than the first thickness (11T). The first layer (11) and the second layer (12) are formed from SiC, the first layer (11) having a higher n-doping concentration than the second layer (12). The vias (1V) extend along a vertical direction from a bottom side (11B) of the first layer (11) partially into the first layer (11) towards the second layer (12), the vias (1V) not extending into the second layer (12). The assembly further comprises a SiC substrate (5), wherein the second layer (12) is arranged between the SiC substrate (5) and the first layer (11). The SiC substrate (5) has a vertical thickness (5T), a ratio (5T/12T) of the SiC substrate (5) to the second thickness (12T) being from 1.5 to 250. The SiC substrate (5) is void of any vias formed from an electrically conductive material. Moreover, a power semiconductor device (10) comprising suchan assembly (1) and a method for producing such an assembly (1) and a method are provided.

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