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Power Semiconductor Device With An Insulated Trench Gate Electrode And Method Of Producing A Power Semiconductor Device
Abstract: A power semiconductor device (1) with a semiconductor body (2) extending in a vertical direction between an emitter side (21) with an emitter electrode (51) and a collector side (22) opposite the emitter side (21) is specified, the power semiconductor device (1) comprising: a drift layer (26) of a first conductivity type; a base layer (28) of a second conductivity type different than the first conductivity type extending between the drift layer (26) and the emitter side (21); a source region (29) of the first conductivity type arranged on a side of the base layer (28) facing away from the drift layer (26); at least one first trench (3) extending from the emitter side (21) into the drift layer (26); an insulated trench gate electrode (30) extending into the first trench (3); at least one second trench (4) extending from the emitter side (21) into the drift layer (26), the at least one second trench (4) being arranged on a side of the at least one first trench (3) facing away from the source region (29); an electrically conductive layer (41) extending into the second trench (4), the electrically conductive layer (41) being electrically insulated from the base layer (28) and the drift layer (26); wherein: a portion (281) of the base layer (28) arranged on a side of the at least one second trench (4) facing away from the at least one first trench (3) extends from the emitter side (21) at least as deep in the vertical direction towards the collector side (22) as the at least one second trench (4); and a sub-region (6) of the power semiconductor device (1) extending between the at least one first trench (3) and the at least one second trench (4) comprises a charge carrier extraction contact (61) electrically connected to the base layer (28). Furthermore, a method of producing a power semiconductor device (1) is specified.
Notices, Deadlines & Correspondence
Patent Information
Applicants
Hitachi Energy Ltd
Inventors
1. DE-MICHIELIS, Luca
2. GUPTA, Gaurav
3. VITALE, Wolfgang Amadeus
4. BUITRAGO, Elizabeth
5. CORVASCE, Chiara
Specification
Documents
Application Documents
| # | Name | Date |
|---|---|---|
| 1 | 202347041035-STATEMENT OF UNDERTAKING (FORM 3) [16-06-2023(online)].pdf | 2023-06-16 |
| 2 | 202347041035-REQUEST FOR EXAMINATION (FORM-18) [16-06-2023(online)].pdf | 2023-06-16 |
| 3 | 202347041035-PROOF OF RIGHT [16-06-2023(online)].pdf | 2023-06-16 |
| 4 | 202347041035-PRIORITY DOCUMENTS [16-06-2023(online)].pdf | 2023-06-16 |
| 5 | 202347041035-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [16-06-2023(online)].pdf | 2023-06-16 |
| 6 | 202347041035-FORM 18 [16-06-2023(online)].pdf | 2023-06-16 |
| 7 | 202347041035-FORM 1 [16-06-2023(online)].pdf | 2023-06-16 |
| 8 | 202347041035-DRAWINGS [16-06-2023(online)].pdf | 2023-06-16 |
| 9 | 202347041035-DECLARATION OF INVENTORSHIP (FORM 5) [16-06-2023(online)].pdf | 2023-06-16 |
| 10 | 202347041035-COMPLETE SPECIFICATION [16-06-2023(online)].pdf | 2023-06-16 |
| 11 | 202347041035-FORM-26 [26-07-2023(online)].pdf | 2023-07-26 |
| 12 | 202347041035-FORM 3 [30-11-2023(online)].pdf | 2023-11-30 |
| 13 | 202347041035-PA [03-04-2024(online)].pdf | 2024-04-03 |
| 14 | 202347041035-ASSIGNMENT DOCUMENTS [03-04-2024(online)].pdf | 2024-04-03 |
| 15 | 202347041035-8(i)-Substitution-Change Of Applicant - Form 6 [03-04-2024(online)].pdf | 2024-04-03 |
| 16 | 202347041035-FER.pdf | 2025-11-11 |
Search Strategy
| 1 | 202347041035_SearchStrategyNew_E_SearchHistory(9)E_07-11-2025.pdf |