Silicon Carbide Semiconductor Device And Manufacturing Method

Abstract: The present disclosure relates to a power semiconductor device (100) comprising a silicon carbide semiconductor, SiC, structure (110) comprising a SiC epilayer (112), at least one ohmic contact (120) formed on a first main surface (114) of the SiC structure (110), and at least Schottky barrier contact (130) formed on a second main surface (116) of the SiC structure (110). The at least one Schottky barrier contact (130) comprises a metal layer (136) and a carbon group interlayer (134) arranged between the metal layer (136) and the second main surface (116) of the SiC structure (110). 15 The present disclosure relates to a Schottky barrier diode (400), a vertical field effect transistor, such as a power MOSFET (500), and a method for manufacturing a power semiconductor device (100).

Patent Information

Application #

Filing Date

28 February 2024

Publication Number

12/2024

Publication Type

INA

Invention Field

ELECTRONICS

Status

Email

Parent Application

Applicants

HITACHI ENERGY LTD

Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. ALFIERI, Giovanni

Gugelweg 29 5103 Möriken

2. KNOLL, Lars

Höhenweg 1 5607 Hägglingen

Specification

Documents

Application Documents

#	Name	Date
1	202447014459-STATEMENT OF UNDERTAKING (FORM 3) [28-02-2024(online)].pdf	2024-02-28
2	202447014459-PROOF OF RIGHT [28-02-2024(online)].pdf	2024-02-28
3	202447014459-PRIORITY DOCUMENTS [28-02-2024(online)].pdf	2024-02-28
4	202447014459-FORM 18 [28-02-2024(online)].pdf	2024-02-28
5	202447014459-FORM 1 [28-02-2024(online)].pdf	2024-02-28
6	202447014459-DRAWINGS [28-02-2024(online)].pdf	2024-02-28
7	202447014459-DECLARATION OF INVENTORSHIP (FORM 5) [28-02-2024(online)].pdf	2024-02-28
8	202447014459-COMPLETE SPECIFICATION [28-02-2024(online)].pdf	2024-02-28
9	202447014459-FORM-26 [04-05-2024(online)].pdf	2024-05-04
10	202447014459-FORM 3 [25-07-2024(online)].pdf	2024-07-25