Superjunction Power Semiconductor Device And Method For Manufacturing A Superjunction Power Semiconductor Device

Abstract: The present disclosure relates to a super junction power semiconductor device (20) comprising a substrate (1), a plurality of core structures (4) and a plurality of annular shell structures (5). Each core structure (4) has a cylindrical shape extending in a direction perpendicular to a main surface of the substrate (1) and comprising a first semiconductor material of a first conductivity type. Each shell structure (5) surrounds one of the core structures (4) on its outside and comprises a second semiconductor material of a second conductivity type. The disclosure further relates to a method (30) for manufacturing a super j unction power semiconductor device (20).

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