Method For Producing A Semiconductor Device And Semiconductor Device

Abstract: In at least one embodiment, the method is for producing a semiconductor device (1) and comprises the following steps in the stated order: A) providing a semiconductor body (2) having a top side (20), the semiconductor body (2) is based on SiC, B) producing a first layer (21) of the semiconductor body (2) next to the top side (20) by doping with a dopant (4), C) applying a carbon-containing layer (3) on the top side (20), D) implanting C into the first layer (21) through the carbon- containing layer (3), and E) performing a temperature treatment of the semiconductor body (2) when the carbon-containing layer (3) is still present on the top side (20).

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