Power Semiconductor Device And Method For Producing A Power Semiconductor Device

Abstract: Power semiconductor device and method for producing a power semiconductor device The power semiconductor device (100) comprises a semiconductor body (1) with a top side (10), a main electrode (2) on the top side and a gate electrode (3) on the top side and arranged next to the main electrode in a first lateral direction (L1). The semiconductor body comprises a drift layer (11) of a first conductivity type, a base region (12) of a second conductivity type arranged vertically between the drift layer and the top side, a contact region (13) of the first conductivity type arranged vertically between the drift layer and the top side. The contact region adjoins the base region and the top side. Furthermore, the semiconductor body comprises a drift region (14) of the first conductivity type arranged next to the base region in the first lateral direction and adjoining the base region. The main electrode is in electrical contact with the contact region. In plan view of the top side, the gate electrode at least partially covers a channel portion (12a) of the base region which lies, in the first lateral direction, between the contact region and the drift region. At the top side, at least one of the contact region and the drift region projects beyond the base region in vertical direction.

Patent Information

Applicants

Inventors

Specification

Documents

Application Documents