Abstract: A structure (1) for a semiconductor device is provided, with - a contact layer (4) comprising first dopants of a first conductivity type, - a base layer (2) of a second conductivity type, and - a defect layer (5) comprising first dopants of the first conductivity type, wherein - a concentration of the first dopants being activated in the contact layer (4) is higher than a concentration of the first dopants being activated in the defect layer (5). Further, a method for producing a structure for a semiconductor device is provided.
| # | Name | Date |
|---|---|---|
| 1 | 202347040467-STATEMENT OF UNDERTAKING (FORM 3) [14-06-2023(online)].pdf | 2023-06-14 |
| 2 | 202347040467-REQUEST FOR EXAMINATION (FORM-18) [14-06-2023(online)].pdf | 2023-06-14 |
| 3 | 202347040467-PROOF OF RIGHT [14-06-2023(online)].pdf | 2023-06-14 |
| 4 | 202347040467-PRIORITY DOCUMENTS [14-06-2023(online)].pdf | 2023-06-14 |
| 5 | 202347040467-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [14-06-2023(online)].pdf | 2023-06-14 |
| 6 | 202347040467-FORM 18 [14-06-2023(online)].pdf | 2023-06-14 |
| 7 | 202347040467-FORM 1 [14-06-2023(online)].pdf | 2023-06-14 |
| 8 | 202347040467-DRAWINGS [14-06-2023(online)].pdf | 2023-06-14 |
| 9 | 202347040467-DECLARATION OF INVENTORSHIP (FORM 5) [14-06-2023(online)].pdf | 2023-06-14 |
| 10 | 202347040467-COMPLETE SPECIFICATION [14-06-2023(online)].pdf | 2023-06-14 |
| 11 | 202347040467-FORM-26 [26-07-2023(online)].pdf | 2023-07-26 |
| 12 | 202347040467-FORM 3 [14-11-2023(online)].pdf | 2023-11-14 |
| 13 | 202347040467-PA [01-04-2024(online)].pdf | 2024-04-01 |
| 14 | 202347040467-ASSIGNMENT DOCUMENTS [01-04-2024(online)].pdf | 2024-04-01 |
| 15 | 202347040467-8(i)-Substitution-Change Of Applicant - Form 6 [01-04-2024(online)].pdf | 2024-04-01 |