Led Die Architecture With Non Planar Contact

Abstract: An architecture for an LED and a method to fabricate this architecture are proposed. The method relates to a 3D geometry for the LED die. Semiconductor layers like u-GaN, n-GaN, multiple quantum wells and p- GaN, are sequentially grown over a substrate. The top surface of the p- GaN layer is etched using Photo lithography. Narrow but deep channels are etched into the p- GaN layer till n- GaN layer. For n- and p- contact, required metal layers are deposited over the side walls and bottom surfaces of the channels of n- GaN; and the top surface available of p- GaN between the channels respectively. Since n- contact is achieved by depositing metal over the side walls and bottom surfaces of the channels into n- GaN, current is drawn from three dimensions of the channels namely, length, breadth and height formed by side walls and bottom surfaces of the channels. Hence, this impart non planar/ three dimensional characteristic to the n- contact. To avoid a direct contact between the n- and p- metal contacts, a layer of silicon dioxide is used as an insulator between them. As a result, the proposed three dimensional architecture overcomes a number of limitations present in conventional LEDs like high light extraction, more uniform current distribution, heat extraction, etc.

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