The present invention relates to a method of driving a substrate web (950) into a reaction space of an atomic layer deposition (ALD) reactor and apparatuses therefore. The invention includes driving a substrate web into a reaction space (930) of an atomic layer deposition reactor and exposing the reaction space to ...

The present invention relates to a method of receiving and treating a moving substrate web (1 10) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate w...

The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process and loading the batch of substrates before processing into the reaction chamber module via a different route than the ba...

A method that comprises performing an atomic layer deposition sequence comprising at least one deposition cycle each cycle producing a monolayer of deposited material the deposition cycle comprising introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction cha...

A deposition method comprising providing a horizontal channel formed by a bottom part (255) and a top part ( 250) through a deposition apparatus feeding precursor vapor (211) into the channel and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus. The substrate ...

An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor sou...

An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source...

In accordance with an example embodiment of the present invention there is provided a method that includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self saturating surface reactions and using dry air in the reactor as purge gas. ...

An apparatus and method for protecting a target pump interior where a target pump (10) inlet is provided with an inlet manifold (20) and a target pump outlet with an exhaust manifold (30). The target pump interior is exposed to sequential self saturating surface reactions by sequential inlet of reactive gases accord...

The invention relates to a deposition reactor including an in feed part that defines an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source (110) towards a reaction chamber the expansion space widening towards the reaction chamber (335) and a lifting mechanism for loadi...

A method for applying an anti-counterfeit signature on a product, and an anti-counterfeit signature. The method comprises selecting a substrate and a type of signature and forming a signature of the selected type on the substrate with atomic layer deposition, ALD, wherein forming the signature comprises applying ...

The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber (335) on at least one substrate (360) by sequential self saturating surface reactions and allowing gas from an inactive gas source to flow into a widening radical in feed ...

An apparatus and method for forming a substrate web (15) track with a repeating pattern into a reaction space of a deposition reactor (10) by moving a first set of support rolls (17 27 37) in relation to a second set of support rolls (18 28). One effect of the invention is automatic track formation. Another effect i...

An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source...

The invention relates to a method and an apparatus in which precursor vapor (101) is guided along at least one in-feed line (141,142) into a reaction chamber (110) of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates (170) by establishing a vertical flow of precur...

The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of load...

An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, ...

It is desirable to coat small particles with thin coatings to alter the surface properties of these particles while maintaining their bulk properties. The ALD technique is an interesting application for this purpose. The invention provides a method and an apparatus for arranging a precursor vapor flow through a vert...

It is desirable to coat small particles with thin coatings to alter the surface properties of these particles while maintaining their bulk properties. The ALD technique is an interesting application for this purpose. The invention provides a method that includes receiving an atomic layer deposition (ALD) cartridge (...

A system and method for atomic layer deposition, ALD, where an actuator arrangement is configured to receive a batch of substrates and transfer the substrates through a first load-lock (220) horizontally into a vacuum chamber (310), and to lower the substrates within the vacuum chamber (310) into a reaction chamber ...

A deposition method to reduce metal whisker formation, electromigration and corrosion is provided comprising providing a substrate and pretreating the substrate by cleaning. The substrate is also pretreated by preheating and/or evacuating. Finally, on the substrate a stack is deposited by ALD (atomic layer depositio...

An apparatus and method for protecting a gas container interior (410) where an inlet and exhaust manifold comprising a port assembly attachable to a port (411) of the gas container is provided the gas container interior is exposed to sequential self saturating surface reactions by sequential inlet of reactive gase...

A process of depositing germanium on a substrate comprising sequentially exposing in at least one deposition cycle the substrate inside a chamber with a Ge containing precursor and a reducing or oxidizing precursor. The object is to provide an industrially applicable method for depositing germanium and germanium oxi...

A deposition or cleaning apparatus comprising an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber the lowered position being for load...

A substrate processing apparatus comprising an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer ...

A fluid distributing device 100 for directing fluids into a reaction chamber 201 of a thin-film deposition apparatus, related apparatus, systems and methods are provided. The device 100 comprises an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for m...

An apparatus and method for protecting an interior of a hollow body (410) where an inlet and exhaust manifold comprising a port assembly attachable to an opening (41 1 ) of the hollow body is provided the interior of the hollow body is exposed to sequential self saturating surface reactions by sequential inlet of...

A substrate processing apparatus (100) and a related method, comprising a reaction chamber (130) and a plasma in-feed line (115) where plasma species is introduced into the reaction chamber (130) for a deposition target (160). The plasma in-feed line (115) comprises an inlet part (110) configured to speed up gas vel...